Abstract
The magnetic properties of naturally layered intermetallic compound SmMn2Si2 with textured structure have been studied. There exist a ferromagnetic transition at 35 K and two antiferromagnetic transitions at 120 and 230 K. The antiferromagnetic state below 230 K exhibits different magnetoresistance, with a negative magnetoresistance of 3%–4% for current I applied perpendicular to the c axis and with a positive magnetoresistance effect of about 4%–6% for current I parallel to the c axis. The observed magnetoresistance is likely to be related to magnetovolume effects. In the ferromagnetic state, a positive magnetoresistance with a maximum increase of 22% under an applied field of 5 T is observed at 4 K, and both H ⊥ I and H ∥ I configurations show positive magnetoresistance.
Highlights
Layered intermetallic ternary compounds, RMn2X2 ͑Rϭrare earth and XϭSi, Ge, have become of renewed interest recently because of the large magnetoresistanceMReffect1–3 which quite resembles that of the artificially layered magnetic thin film.2,4 The crystal structure of the compounds is of body-centered tetragonal ThCr2Si2 type
The structure is formed by the stacking of atomic layers perpendicular to the c axis with the sequence -Mn2-X-R-X
Magnetization measurements between 4 and 300 K for the compound SmMn2Si2 indicated a ferromagnetic transition at 35 K, two antiferromagnetic transitions at 120 and 230 K, consistent with the resistance-temperature dependence
Summary
Layered intermetallic ternary compounds, RMn2X2 ͑Rϭrare earth and XϭSi, Ge, have become of renewed interest recently because of the large magnetoresistanceMReffect which quite resembles that of the artificially layered magnetic thin film. The crystal structure of the compounds is of body-centered tetragonal ThCr2Si2 type. The structure is formed by the stacking of atomic layers perpendicular to the c axis with the sequence -Mn2-X-R-X-. In this system, much attention has been paid to SmMn2Ge2 because it has been shown to undergo several magnetic phase transitions at high and low temperatures and exhibits interesting magnetotransport behavior.. For the Si containing system, little work has been done on SmMn2Si2 ͑Ref. 6͒ or Si-substituted SmMn2͑Ge1ϪxSix2 .7. The Si-substituted SmMn2͑Ge1ϪxSix was studied over the composition range xϭ0–0.15 only.. The low-temperature magnetic and magnetotransport behaviors of SmMn2Si2 have not been well studied. SmMn2Si2 has been prepared and its low-temperature magnetic phase transitions and magnetoresistive effects have been investigated
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