Abstract
Magnetic and electronic properties of reduced rutile titanium dioxide (TiO 2-δ ) thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting TiO 2-δ :Mn films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near 1019 cm ?3 . The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism?trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring Mn 3+ ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.
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