Abstract
We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAs∕Si(001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300to20nm for MnAs∕GaAs(001) samples. These results indicate a radical change of the electronic structure of the MnAs layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
