Abstract
Films of Fe-doped ITO were epitaxially grown at oxygen (including 8% ozone) partial pressures of 5, 1, 1×10 −1,1×10 −2, and 1×10 −3 Pa on yttria-stabilized zirconia substrates by a pulsed-laser deposition method. Magnetic and electric properties of the films varied systematically with the oxygen partial pressure. The films grown at 5 and 1 Pa were paramagnetic and semiconducting, that at 10 −1 Pa was ferromagnetic and semiconducting, and those at 10 −2 and 10 −3 Pa were ferromagnetic and metallic. The Fe–ITO films grown at the pressure below 10 −1 Pa exhibited room-temperature ferromagnetism.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
