Magnet-free uniform sputtering of dielectric film by RF and microwave power superposition

Abstract

A novel sputtering device that is free of magnets (magnet-free surface wave sputtering plasma: MF-SSP) is developed by combining a surface wave plasma and RF bias power. Low-pressure (<0.5 Pa) plasma sustainment is demonstrated by MF-SSP with a uniform sputter deposition rate with a deviation of less than 5% within an area of 10 × 10 cm2. Highly oriented MgO films are deposited at a substrate temperature of 200 °C.