Abstract
Electrical conduction type conversion was achieved by implanting either 15-keV Mg or Zn ions into n-type GaP substrates at room temperature and by subsequent annealing at 900°C. The p-n junction formed by the Zn implant lay at about 12.2 μm beneath the implanted surface and this depth was approximately 120 times deeper than that formed by the Mg implantation. For higher-temperature annealing, diffusion played a predominant role in the final atom location of Zn implanted in GaP, but that of Mg was not so affected. Hall mobility of holes was found to be approximately 28 cm2/V sec at room temperature in both p-type layers formed by Mg and Zn implantations. In the Zn-implanted samples, the room-temperature hole concentration, determined from the Hall coefficient, was found to exceed the Zn concentration expected from ion dose.
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