Abstract
As/Ga ratio, off-angle, growth temperature and growth time dependence of step bunching of GaAs (1 1 1)B surface inclined toward 〈 1 ̄ 1 ̄ 0〉 was studied using microprobe-RHEED/SEM MBE system and AFM. Step bunching occurs and macrosteps are created at low As/Ga ratio while at high As/Ga ratio they are decomposed into steps of a few monolayers. The macrostep terraces and risers were identified respectively as (1 1 1)B and ( 2 ̄ 2 ̄ 1 ̄ ) . Terrace width of the macrosteps was found to depend on off-angle while step height was kept constant. Both terrace width and step height were independent of growth temperature in the temperature region in which the surface reconstruction of (1 1 1)B was 19 × 19 . It was found that terrace width increases linearly with growth time and shows saturation when step height of the macrostep becomes 2 nm.
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