Abstract
In this report we present the results of both analytical theory and numerical modelling of electron/hole transport in InP/InGaAsP long-wavelength lasers. For numerical simulation we use the ISE-AG commercial software package DESSIS. The efficiency of carrier injection into the active region (AR) as well as the leakage currents of electrons and holes out of this region determine the main power characteristics and performance of semiconductor laser heterodiodes.
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