Abstract
The interface defects formed at the oxide–SiC interface impact not only on channel mobility of MOSFET but also on many scenes such as generation or extinction of Si/C atom vacancies and formation of single-photon sources. Therefore, it is very important to know the oxidation mechanism of SiC more in detail. We have previously proposed a unified SiC oxidation model based on the Si and C emission phenomenon. In addition, it has been revealed that this model accurately reproduces the oxide growth rate in the entire oxide thickness range for various oxidation conditions and substrate surface orientations. In this report, based on the experimental verifications for the four oxidation stages deduced from this unified oxidation model, the validity of this model was reviewed. Furthermore, the interface-emitted Si and C concentrations were simulated for various oxidation temperatures and substrate surface orientations. Based on the simulation results together with experimental results of interface state density, the optimum oxide growth condition has been discussed.
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