Abstract
Interface engineering to modulate electronic transport is a pivotal technological and scientific endeavour. Herein, regardless of the macroscopic or microscopic aspects, we successfully demonstrate the piezotronic-like response in bulk bending centrosymmetric semiconductors single crystal Si strip with more flexibility and flexure in the home-built fixed platform. The flexoelectric potential and flexotronics could be dramatically enhanced by bending single crystal Si strip due to the change of the crystal structure and lattice constant. Besides, the flexoelectric polarization direction can be tuned by changing the bending direction. Moreover, the thinner the bending material is, the greater the SBH change rate. Theoretically, the working mechanism of flexoelectricity induced by the synergistic contribution consequence of the surface piezoelectric effect and bulk flexoelectric effect is elucidated.
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