Abstract
In this study, we propose an improved macro-model of an N-type feedback field-effect transistor (NFBFET) and compare it with a previous macro-model for circuit simulation. The macro-model of the NFBFET is configured into two parts. One is a charge integrator circuit and the other is a current generator circuit. The charge integrator circuit consisted of one N-type metal-oxide-semiconductor field-effect transistor (NMOSFET), one capacitor, and one resistor. This circuit implements the charging characteristics of NFBFET, which occur in the channel region. For the previous model, the current generator circuit consisted of one ideal switch and one resistor. The previous current generator circuit could implement IDS-VGS characteristics but could not accurately implement IDS-VDS characteristics. To solve this problem, we connected a physics-based diode model with an ideal switch in series to the current generator circuit. The parameters of the NMOSFET and diode used in this proposed model were fitted from TCAD data of the NFBFET, divided into two parts. The proposed model implements not only the IDS-VGS characteristics but also the IDS-VDS characteristics. A hybrid inverter and an integrate and fire (I&F) circuit for a spiking neural network, which consisted of NMOSFETs and an NFBFET, were simulated using the circuit simulator to verify a validation of the proposed NFBFET macro-model.
Highlights
The parameters of the BSIM-IMG model for the N-type metal-oxide-semiconductor field-effect transistor (NMOSFET) and the diode model were first fitted with the technology computeraided design (TCAD) data of the N-type feedback field-effect transistor (NFBFET)
For the IDS -VDS characteristics, the hysteresis characteristics occur under specific conditions, which are controlled by sustaining drain voltage with continuity of diffusion and generation-recombination currents in the channel region [28]
We proposed an improved macro-model of an NFBFET compared with a previous model
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. S-shape to parallel, owing to the positive feedback These characteristics of the FBFET cause a high on/off current ratio and a sharp increase and decrease in the forward sweep and the reverse sweep, respectively. Memory circuits, neuromorphic circuits, and biosensors consisting of FBFETs or hybrid components (e.g., the FBFET and the MOSFET) were investigated utilizing charging in the channel region and the hysteresis characteristics [17,18,19,20,21,22]. The charge integration circuit is composed of one MOSFET and one capacitor, and the current generation circuit consists of one ideal switch and one resistor This model has a limitation on implementing the IDS -VDS characteristics of FBFET.
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