Machining characteristics and removal mechanisms of reaction bonded silicon carbide

Abstract

Silicon Carbide (SiC) has been recognized as a leading material for optical applications. In this paper, grinding of RBSiC using diamond wheels on surface milling machine under various grinding parameters was investigated. Examinations of ground surfaces reveal that surface roughness increases with increase of depth of cut and decreases with increase of burnishing time, but a further prolonged of burnishing time did not work obviously to improve surface quality. Values of surface roughness swing with increase of work-piece rotation speed and exhibit variety with the increase of the cumulate removal volume under different depths of cut. The Vickers hardness of ground RBSiC decreases with the depth of cut. Scanning electron microscopy (SEM) observation revealed that brittle fracture and plastic flow removal mode coexist during grinding process. The percentage of ductile-mode grinding area decreased with increasing of depth of cut.