Abstract

Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ- or X-point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ-, L-, or W-point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W-point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy.

Highlights

  • High thermoelectric performance requires a high thermoelectric quality factor which is proportional to the weighted mobility, μW, divided by the lattice thermal conductivity, κL [1]

  • There are over 50 known semiconducting halfHeusler compounds [7], and it is not clear how the chemical composition affects the electronic structure

  • We use machine learning to develop simple models that explain the electronic structures of halfHeusler phases

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Summary

Introduction

High thermoelectric performance requires a high thermoelectric quality factor which is proportional to the weighted mobility, μW, divided by the lattice thermal conductivity, κL [1]. High weighted mobility, which is correlated to high peak power factor, makes p-type half-Heusler materials strong candidates for thermoelectric applications. These materials owe their high weighted mobilities and high power factors to weak electron-phonon coupling and high valley degeneracy imposed by the symmetry of the Brillouin zone [2,3,4,5,6]. We use machine learning to develop simple models that explain the electronic structures of halfHeusler phases. We use machine learning to elucidate how composition affects the relative energies of these k-points, which can direct efforts to engineer band structures with high degeneracy and weighted mobility. Instead of considering the total valence electron count (rule for stability), these rules consider the relative valence electron configurations of the elements on each site of the crystal structure (Figure 1)

Classifying Valence-Band-Edge Electronic Structures
Valence Difference Rules for Engineering Γ‐L Carrier Pockets
All other compounds
Engineering Highly Degenerate W-Pocket Materials
Conclusions
Findings
Methods
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