Abstract

In recent years, the extensive use of diamond wire sawing technology in the multi-crystalline wafer manufacturing industry has encouraged the use of nanostructured black Si technology to achieve an optimal surface texture. In this paper, metal-assisted chemically etched black silicon samples with different texture opening sizes ranging from 430 to 865 nm and different depth sizes ranging from 269 to 698 μm were prepared. Different groups of texture's diameter and depth named group 1 to group 5 were characterized. Based on the different nanostructured black Si texture size, optic loss analysis was performed on as-textured, SiN x coated, and module-encapsulated surface structures, respectively, to well understand the effect of the texture structure and size. Passivation quality, cell and module performance were also evaluated to obtain the optimized surface texture structure.

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