M. Stutzmann, J. Chevallior (ed). Hydrogen in Semiconductors: Bulk and Surface Properties. Proceeding of the Sixth Trieste IUPAP‐ICTP Semiconductor Symposium, Trieste, Italy, August 1990. North Holland, Elsevier Science Publishers B. V., Amsterdam, New York 1991, 581 Seiten, Preis: US $ 214.50. ISBN 0–444–89138–2

Abstract

Crystal Research and TechnologyVolume 27, Issue 6 p. 798-798 Book Review M. Stutzmann, J. Chevallior (ed). Hydrogen in Semiconductors: Bulk and Surface Properties. Proceeding of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, Trieste, Italy, August 1990. North Holland, Elsevier Science Publishers B. V., Amsterdam, New York 1991, 581 Seiten, Preis: US $ 214.50. ISBN 0–444–89138–2 R. Bindemann, R. BindemannSearch for more papers by this author R. Bindemann, R. BindemannSearch for more papers by this author First published: 1992 https://doi.org/10.1002/crat.2170270610AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat No abstract is available for this article. Volume27, Issue61992Pages 798-798 RelatedInformation