Abstract
Persistent photoionization of the DX-center in GaAs implanted with129mTe isotopes is observed with Mossbauer spectroscopy. The time constant of the relaxation from the donor site to the DX-center defect site, after the illumination is stopped, is measured as a function of temperature. A small energy barrier for capture (1 meV) is derived from these measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
