Abstract
Insulated gate bipolar transistor (IGBT) modules with multiple chips have wide range of applications, and the correct estimation for the thermal behaviors inside IGBT modules is becoming crucial. Thermal impedance matrix is one of the most adopted approaches to describe the thermal-coupling effect of IGBT module. For simplicity of analysis, the heatsink or ambient temperature is typically chosen as the reference node for the thermal-coupling impedance term, while the case temperature is simplified or ignored. This letter provides a thermal coupling model enabling case temperature as reference node. This proposed model decouples the thermal coupling impedances of IGBT module itself and external cooling condition, so that the modeling of cooling conditions outside device and inside the power module, can be separately considered. The characterization method and advantages of the proposed model are verified by an experimental demonstration, and the potential applications are further discussed.
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