Luminous power improvement in InGaN V-Shaped Quantum Well LED using CSG on SiC Substrate

Abstract

This paper presents the design and simulation of Silicon Carbide (SiC) based technology, Indium Gallium Nitride (InGaN) Multiple Quantum Well (MQW) Light-Emitting Diode (LED) with a Compositionally Step Graded (CSG) InGaN barrier and V-Shaped well in the active region. The simulations are obtained in Silvaco Computer Aided Design simulator and parameters such as Internal Quantum Efficiency (IQE) with respect to input current, spontaneous emission in regard to wavelength and power versus current in the device are theoretically studied. The CSG InGaN barrier LED with V-shaped quantum well shows substantial growth in output power when compared to the CSG GaN barrier structure with conventional MQW. The high carrier confinement in the V-shape well causes, transportation/injection of hole and change in band bending due to polarization effect. Moreover, lattice-matched SiC substrate over GaN material increases the InGaN V-shaped MQW LEDs radiative recombination rate which in turn leads to high output power. The optical luminous power of 160mW and 82% of peak IQE, emitting wavelength at 460 nm and 200mA of injection current is obtained for the proposed LED. The enactment of the V shape MQW CSG-InGaN device technology is a good alternative choice for commercial and industrial lighting applications.