Abstract
Sr1−xErxF2+x solid solution thin films were grown on InP (100) substrates by sublimation under ultrahigh vacuum of high purity powders. The composition of the layers was mainly deduced from Rutherford backscattering and secondary ion mass spectrometry studies. For an erbium substitution rate, x, lower than 0.2, it is shown that the film compositions are analogous with those of the solid solution initial powders, quite homogeneous, and insensitive to an air exposure. X-ray diffraction and Rutherford backscattering in channeling conditions were performed to study the texture and the structure of the layers. It is shown that heteroepitaxial Sr1−xErxF2+x/InP (100) structures can be grown for a substrate temperature of 300 °C.
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