Abstract
Photoluminescence (PL) spectra of ZnSe single crystals grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with the group V elements (P, As, Sb, Bi) during the growth are investigated in the wavelength range between 420 and 750 nm at temperatures between 10 and 300 K. The effect of co-doping of ZnSe samples with iodine and the group V elements on luminescence centers and PL spectra is studied. It is established that acceptor-type associative centers of activator luminescence (ISeASe), where A represents the group V element, are formed as a result of co-doping. These centers are responsible for new wide bands of long-wavelength emission with maxima between 575 and 580 nm at room temperature. Photoluminescence mechanism that explains the behavior of the observed PL bands with temperature variation is proposed.
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