Abstract
The investigations of photoluminescence and of photoinduced absorption have been carried out in ZnSe:Te crystals. The parameters of series of deep centers of intrinsic defects and their associates have been determined, and their connection with luminescence in ZnSe:Te has been revealed. The formation of high stable centers of { V - Zn + Te 0 Se + D +} 0 with the compensation of local deformation and charge is caused by the Te doping. The annealing of ZnSe:Te crystals in halogen vapour leads to the creation of IR-radiative centers of rapid hole capture which quench a red luminescence.
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