Abstract
Luminescence transients has been studied in GaN grown by hydride vapor-phase epitaxy (HVPE) under intense photoexcitation conditions. The HVPE grown GaN layer exhibited luminescence decay time of 205 ps, that implies the room-temperature free-carrier lifetime of 420 ps. The obtained carrier lifetime of HVPE-grown GaN is significantly higher that the typical values of carrier lifetime measured for GaN heterolayers grown by metalorganic chemical vapor deposition, what suggests high potential of HVPE growth technique for light-emitting diode and blue laser applications.
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