Abstract
Photoluminescence (PL) study on lateral bandgap modulation in a Si 1-x Ge x /Si quantum well induced by self-assembled Ge islands which act as stressors is carried out. It is confirmed that excitons are confined in the modulated quantum structure (MQS) in compressively strained regions induced by the Ge islands. Redshift of PL peaks from MQSs does not show a monotonic change but complicated behavior, i.e., it increases up to Q = 3.7 ML and saturates above Q = 4.1 ML after once retrogressing with the increase in the Ge coverage. The results are explained in terms of elastic deformation due to Ge stressors and lattice relaxation in the Ge islands.
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