Abstract

Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

Highlights

  • Luminescence of various Bi3+-doped materials was systematically investigated starting from the 1960s

  • The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells

  • We compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics

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Summary

Introduction

Luminescence of various Bi3+-doped materials (alkali halides; alkaline-earth oxides, sulfates and phosphates; tungstates; garnets; perovskites; silicates; borates; vanadates; niobates, etc.) was systematically investigated starting from the 1960s (see, e.g., review papers [1,2,3,4,5,6,7,8,9,10,11] and references therein). Mainly luminescence characteristics of Bi3+-doped compounds (collected in Tables 1 and 2) are addressed As it was noticed many years ago [1,68,69], two types of Bi3+-related emission bands with strongly different characteristics exist in these materials We compare the characteristics of the Bi3+-related luminescence in different compounds; discuss the possible origin of the corresponding luminescence centers; consider theoretical models of their RES and phenomenological models allowing to describe the excited-state dynamics of the Bi3+-related centers of different types and determine the structure and parameters of their RES; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. [114] [63] [63] [127] [115] [115] [78,95] [1,24,113, 128] [24] [83] [111] [58] [58] [1] [129] [130]

Characteristics of the Ultraviolet Luminescence
Relaxed Excited States Models
KCl:Bi 5
Characteristics of the Visible Luminescence
On the Origin of the Excited States Responsible for the VIS Luminescence
On Possible Mechanisms of Processes Responsible for the VIS Luminescence
Ultraviolet Luminescence

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