Abstract
We present both theoretical and experimental results of our investigation into hot-electron luminescence in p-Si tunnel metal-oxide-semiconductor structures. The luminescence spectra of such structures contrast considerably with those of other silicon-based devices due to the fundamentally different method of charge injection, and we discuss several of their interesting features. The potential for direct modulation of low-intensity, low-efficiency infrared emission between 1.24 and 1.6μm is also demonstrated. Additionally, we investigate the role of self-heating, the influence of crystal axis orientation, and the possibility of anisotropy, and find the effect of each to be relatively small.
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