Abstract
Doped Bi4Ge3O12 (BGO) fiber single crystals were grown by the micro-pulling-down method with the resistance heating system. Optical absorption measurements before and after x-ray irradiation (induced absorption) were performed in order to investigate the radiation damage of the crystals. The Eu3+-doped BGO has shown higher radiation resistance with respect to the equivalently grown undoped BGO fibers. Radio- and photoluminescence characteristics were obtained to clarify the role of Eu3+ in luminescence and scintillation mechanism. Radioluminescence spectra show the intense and slow (decay time of 1.61 ms) D0,15−7Fx(x=0−6) radiative transitions of Eu3+, while the intrinsic BGO emission becomes weaker with respect to the undoped BGO. Photoluminescence decay of the intrinsic BGO emission becomes nonexponential and noticeably faster in Eu-doped samples, which evidences the nonradiative energy transfer from intrinsic emission centers to Eu3+ ions. Thermally stimulated luminescence (TSL) measurements above room temperature prove that Eu3+ doping strongly influences the concentration of TSL active traps.
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