Abstract
The power dependence and the temperature dependence of the luminescence intensity of ultra-thin pseudomorphic ZnSe quantum wells, grown on high index GaP substrates were investigated. A blue shift of PL with power excitation is mainly related to the band filling of interfacial ZnSe clusters while it is found that the piezoelectric field has only a small influence. Luminescence spectra of ultra-thin ZnSe/ZnS single quantum wells are characterized by an excitation dependent excitonic localization phenomenon.
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