Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases

Abstract

Deep-etch-defined GaAs/Al0.3Ga0.7As square features of multiquantum well material, with dimensions as small as 160 nm, have been fabricated using magnetron reactive ion etching (MIE). Luminescence spectroscopy shows confinement of charge carriers to the features’ center. The effects of rf power and etching time on the luminescence efficiency of these features and its concomitant etch-induced damage are examined.