Abstract
The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
