Abstract
Red-emitting phosphors La3Ga5GeO14: Eu3+, Bi3+ were prepared by high temperature solid state reactions. The structure and luminescence properties of these phosphors were investigated in detail. The X-ray diffraction study shows the phase formation of La3Ga5GeO14: Eu3+, Bi3+ phosphors. Scanning electronic microscope observation proves that the size of obtained samples is approximately 1–2µm. The band gap of La3Ga5GeO14 is calculated to be 5.234eV based on obtained diffuse reflectance spectrum. Under the near ultraviolet excitation, Eu3+ doped samples can emit bright red light corresponding to the electric dipole transition (5D0→7F2 transition). The dipole–dipole interaction is dominating mechanism for the concentration quenching. The introduction of Bi3+ enhances the luminescence intensity of Eu3+. It also results in the red shift of charge transfer band of O2-→Eu3+. The effect of the co-doping of Bi3+ on the luminescence properties of Eu3+ is discussed in detail. The CIE chromaticity coordinates of typical La3Ga5GeO14: Eu3+, Bi3+ phosphor is close to red-emitting phosphor Y2O2S: Eu3+. Present research indicates that La3Ga5GeO14: Eu3+, Bi3+ is a promising candidate of red-emitting phosphor for white light-emitting diodes.
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