Abstract
Eu 2+-doped β-SiAlON microcrystals with compositions of Eu x Si 6− z Al z O z N 8− z ( x=0.016, z=0.1–2.0) were successfully fabricated by gas pressured reaction. The phase purity, microstructure, crystallinity and luminescent properties of Eu 2+-doped β-SiAlON microcrystals were investigated in detail. The prepared β-SiAlON:Eu 2+ phosphor crystals with Al-doping concentration of z<1.0 showed pure single β-SiAlON phase without secondary polytypoid phases. The prepared β-SiAlON:Eu 2+ microcrystals absorbed a UV-visible spectral region, and showed a single intense emission peak in a spectral range from 528 to 536 nm. The optimal conditions of Al 3+-doping concentration ( z value) for emission intensity, peak wavelength and bandwidth for application to light emitting diodes (LEDs) were discussed.
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