Abstract
The NaCaGaSi2O7:Ce3+、NaCaGaSi2O7:Tb3+ and NaCaGaSi2O7:Ce3+/Tb3+ phosphors were synthesized under a weak reducing atmosphere by the traditional high temperature solid state reaction method. The synthesized phosphors were characterized by X-ray diffraction (XRD), fluorescent decay times, photoluminescence (PL) emission and excitation spectra including temperature-dependent PL properties. The effects of Ce3+ singly doped and Ce3+/Tb3+ co-doped concentrations on the structure, luminescence properties and energy transfer of NaCaGaSi2O7 phosphors were studied in detail. The results indicated that the energy transfers between Ce3+ and Tb3+ in the host occurred mainly via a dipole-dipole mechanism, and the critical distances of the ion pairs (Rc) were calculated by the quenching concentration method and spectral overlap method. The Ce3+ emission intensity and decay lifetimes decrease with the raise of Tb3+ concentration in NaCaGaSi2O7:Ce3+/Tb3+ samples. The above results indicate that NaCaGaSi2O7:Ce3+/Tb3+ can be a candidate as a host material for solid-state lighting and display fields.
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