Abstract
The luminescence of ZnO:Ga ceramics was studied at room temperature under 270 keV electrons irradiation. The near band gap and defects related luminescence intensity independence on irradiation dose up to 9.4 × 1013 e/cm2 as well as absence of thermostimulated luminescence within 300–600 K confirm that ZnO:Ga ceramics is radiation hard material for sub-threshold energy electron irradiation and therefore is prospective as scintillator for sub-threshold electrons detection. The near band gap luminescence peak position is at 393 nm under electron beam irradiation, and it is shifted to the long wave side relative to photoluminescence. The origin of the observed shift could be both – the difference of recharged donor-acceptor pairs created under photoexcitation and electron beam irradiation as well as contribution from host material self-absorption.
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