Abstract
Thin films of Bi 4 Ge 3 O 12 , Bi 4 Si 3 O 12 , PbWO 4 and Bi 2 WO 6 scintillators are manufactured and their luminescent properties are studied under X-ray excitation at 295 K. X-ray induced luminescence spectra are measured and linear dependence of the luminescence intensity on X-ray irradiation dose rate is observed for the dose region up to 3 × 10 - 3 A / kg . The radiation stability of the obtained films is investigated. A possibility of using the obtained thin films for detection of ionizing radiation is demonstrated, in particular, in the case of the films based on Bi 4 Ge 3 O 12 , with Ge, Si or Mn activators taken in the concentrations less than 1.5 mol% in melt.
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