Abstract
Optical absorption, photo- and cathodoluminescence of a sapphire single crystal (α-Al2O3) exposed to pulsed nanosecond radiation with high-power ion beams C+/H+ with an energy of 300 keV and energy density 0.5-1.5 J/cm2 were first investigated in this work. It was found that under ion irradiation accompanied by heating of sapphire up to melting, the formation of F-type centers and their aggregates associated with oxygen vacancies was observed in the crystals under study. These centers have luminescence bands at 330, 410 and 500 nm which depend on the type and wavelength of the optical excitation. The appearance of a new PL emission at 435 nm, presumably associated with a complex vacancy-impurity defect, was also observed in the photoluminescence spectra.
Highlights
It is known that the luminescent properties of wide-band oxide dielectrics, in particular aluminum oxide (α-Al2O3, sapphire), are largely determined by the presence of active centers which are vacancies in various charge states in the anion sublattice [1]
It is seen that the ion-irradiated samples (W=0.5-1.5 J/cm2, curves 2-5) have the absorption band of F-centers (205 nm) [1], which indicates the intensive generation of these centers in the samples under pulsed ion-beam treatment (PIBT)
Conclusion the results of this work show that the irradiation of sapphire single crystal with high-power ion beams C+/H+ with the heating up to the melt phase causes intensive generation of F-type centers in them
Summary
It is known that the luminescent properties of wide-band oxide dielectrics, in particular aluminum oxide (α-Al2O3, sapphire), are largely determined by the presence of active centers which are vacancies in various charge states in the anion sublattice [1]. The main types of anion defects in sapphire crystals are F+ and F-centers which are oxygen vacancies that capture one and two electrons, respectively [2, 3]. In accordance with the principle of charge compensation, oxygen vacancies capture one or two electrons forming electronic F+- and F-centers, respectively. Such centers are characterized by luminescence bands at 330 and 410 nm
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