Abstract
The luminescence and absorption properties of LiF, NaF and MgF2 nanocrystals containing radiation-induced point defects with new properties are investigated. The influence of temperature, at which nanocrystals are maintained after their manufacture, on the efficiency and kinetics of such defects formation is examined. For LiF samples, the activation energy of fotmation processes is determined. X-ray diffraction reflections are compared for LiF nanocrystals, unannealed and annealed after fabrication, unannealed and irradiated with γ-rays or electrons, as well as those manufactured by fragmentation of an irradiated crystal plate. Conclusions are drawn about the processes of self-assembled nanostructures formation, the presence of which is a prerequisite for the creation of radiation-induced point defects with new properties.
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