Luminescence of HgCdTe– and InAsSb–based quantum–well heterostructures

Abstract

Photoluminescence of single quantum-well (SQW) HgCdTe-based structures and electroluminescence of multi quantum-well (MQW) InAsSb-based structures were studied. SQW HgCdTe-based heterostructures were grown by molecular beam epitaxy, while MQW-based InAsSb heterostructures were fabricated by metal-organic chemical-vapour deposition. The specifics of the electronic structure of the materials used is considered in relation to the possibility of observation of optical transitions between the quantization levels of electrons and first and/or second heavy and light hole levels.