Abstract
We studied the luminescence and the thermal stability of defects formed in α-Al2O3 single crystals after pulsed treatment with a beam of C+/H+ ions with an energy of 300 keV and a pulse duration of ~80 ns. By measuring optical absorption, photoluminescence, and pulsed cathodoluminescence, it is found that this type of exposure leads to intense generation of both single F and F+ centers and more complex defects (F2 aggregate centers or vacancy–impurity complexes) in α-Al2O3. The thermal stability of F-type defects formed in α-Al2O3 upon exposure to a pulsed ion beam is comparable to the stability of radiation-induced defects in neutron-irradiated samples.
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