Abstract
The emission of CuInS 2 is studied as a function of the exact composition in terms of deviations from molecularity and stoichiometry. By means of temperature-dependent (4.2–220 K) and excitation-intensity-dependent measurements, the two broad emission bands usually present are correlated with donor-acceptor transitions. In In-rich material the acceptor is located at 0.10 eV above the valence band. This acceptor is ascribed to V Cu. In Cu-rich CuInS 2 the acceptor level is located at 0.15 eV above the valence band, which is attributed to either V In or Cu In. Two donor levels are identified, their ionization energies being about 35 and 72 meV. These donors are present in both In and Cu-rich samples and may originate from either intrinsic defects or impurities (Fe). Also, the influence of quenching of the crystals as well as the effect of different crystal growth methods (melt-growth and vapour-growth) on the emission is studied.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
