Abstract
Ten-fold increase in quantum yield of defect luminescence was found in area 750 nm with simultaneuous growth of its attenuation from 4 to 200 ns, caused by decoration of quantum point (QP) Ag 2 S/SiO 2 (5.0±1.5 nm) surface with nanoparticles (NP) Au (2.0±0.5 nm). Based on analysis of luminescence kinetics at 77 and 300 K the conclusion was drawn on non-specific manifestation of plasmon-exiton interaction caused by polarization effects from NP Au at properties of small traps that participate in generation of defect luminescence kinetics of QP Ag 2 S/SiO 2 . Keywords: IR luminescence; luminescence attenuation kinetics; quantum points, plasmon nanoparticles, plasmon-exiton interaction.
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