Abstract

Some general features of the behavior of Cu, Zn, Bi, S, Eu and Mn impurities in CdSiP<SUB>2</SUB> crystals are studied by analyzing photo- and electron beam-excited luminescence spectra measured in a temperature range of 1.4 to 300 K, as well as by determining their electrical parameters. The impurities are established to substitute mainly the cadmium in the crystalline lattice and to promote the formation of complexes of defects, which are radiative recombination centers. Cd vacancies as well participate in the defect complex formation processes. A radiation ascribed to interstitial Cd-type defects, is discovered in CdSiP<SUB>2</SUB> crystals. From comparison with Raman scattering measurements, the direct band gap was evaluated to be 2.42 eV at 1.4 K.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.