Abstract
This paper discusses the luminescence properties of films of cadmium and zinc chalcogenides obtained by the diffusion of tin from the vapor phase in a closed volume. It is established that the doping of ZnSe, CdS, and CdSe substrates increases the efficiency of the edge emission, while that of ZnTe causes it to disappear and causes a new band to appear in the energy region 1.8–2.1 eV. The absence of luminescence of CdTe : Sn films in the 0.6–1.6-eV range is explained by band corrugation.
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