Abstract
The results of a study of the luminescence of Bi 4Ge 3O 12 (BGO) crystals at low excitation intensity by a KrF laser ( hv = 4.98 eV) and a two-photon excitation by an intense XeF laser (2 hv = 7 eV) confirm that the main emission band (2.5 eV) is due to optical transitions in local Bi 3+ ions. Under intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly excited electrons in the conduction band.
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