Abstract
The photoluminescence spectra of SbSI, BiSI and SbSIxBr1-x single crystals were studied at 80°K and the temperature dependencies of luminescence intensity and photocurrent in the region of 80-150°K were measured. By comparing the photon energies and activation energies of the luminescence extinction and the photocurrent increases the following conclusion were drawn. The luminescence centres are, most probably, donor-acceptor pairs and the radiation occurs by a tunnel recombination transition corresponding to either an electron from a shallow donor into a deep acceptor, or a hole from the shallow acceptor into a deep donor. The energy depth of both levels of luminescence centre is estimated for different luminescence bands.
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