Abstract
The ability to incorporate europium ions in a near-surface layer of a nonlinear optical material KTiOPO4 by ion implantation is reported here. Europium diffusion as well as surface modification were characterized after annealing using RBS. The photoluminescence of the as-implanted samples indicates that the creation of defects gives rise to green visible emission centered about 550nm. Annealing up to 1000°C does not allow the oxidation to the 3+ valence state of the europium ion. However it is shown that annealing up to such high temperature gives rise to an intense near infra-red photoluminescence in the range 800–1100nm in implanted samples at an optimal fluence of 2×1013 europium ions/cm2.
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