Abstract
We report measurement of the luminescence spectra of highly photoexcited semiconductor samples of GaAs, CdTe and InP. The experiments were performed under similar conditions as those imposed on the systems in previous work devoted to the observation of inelastic (Doppler - Raman) scattering of light. We show that our results are fully consistent with the interpretation of the macroscopic thermodynamic state of the system in terms of a hot excitation model.
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