Abstract
New ion implantation techniques were used to study phenomena related to emission in ZnO thin films implanted with Cu. Room temperature Cu implantation was at 125keV, in a Cu dose range of 1 × 1012 to 2 × 1014ions/cm2. The intensity of band-edge emission was continuously decreased with increasing Cu dose because of implantation-induced damage. After annealing the films at 800°C for 3h, we observed luminescence in the visible region; this was enabled by recovery from the implantation damage and the Cu phosphor. Emission at about 555nm was observed in the Cu dose range from 1 × 1012 to 2 × 1014ions/cm2.
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