Abstract

Attempts have been made to incorporate copper into cadmium sulphide crystals during growth, which has been carried out either in an excess partial pressure of cadmium or sulphur vapour. The intensities of the four major photoluminescence bands at 0.71–0.78, 1.02, 1.57 and 1.87 μm have been studied in relation to the conditions under which the crystals were grown. It is also demonstrated that the intensities of the various bands, as measured at 85°K, depend on whether the samples have previously been illuminated at temperatures in the range 160–400°K. It is concluded that two complex centres (a self activated centre and a high energy copper centre) are responsible for the 0.71–0.78 μm emission, and that a different defect (which is either a substitutional copper ion or a complex association of copper ions and cadmium vacancies) is responsible for the remaining three luminescence bands.

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