Abstract
Zinc oxide (ZnO) is a strong luminescent material, as are several polymers. These two materials have distinct drawbacks and advantages, and they can be combined to form nanostructures with many important applications, e.g., large-area white lighting. This paper discusses the origin of visible emission centers in ZnO nanorods grown with different approaches. White light emitting diodes (LEDs) were fabricated by combining n-ZnO nanorods and hollow nanotubes with different p-type materials to form heterojunctions. The p-type component of the hybrids includes p-SiC, p-GaN, and polymers. We conclude by analyzing the electroluminescence of the different light emitting diodes we fabricated. The observed optical, electrical, and electro-optical characteristics of these LEDs are discussed with an emphasis on the deep level centers that cause the emission.
Highlights
Zinc oxide (ZnO), a II-VI direct wide bandgap semiconductor, has been studied by the scientific community since the 1930s [1]
4H-p-SiC epitaxial layer. (Right) Typical room temperature I-V characteristics obtained from the light emitting diodes (LEDs) fabricated with n-ZnO nanorods/4H-p-SiC
This paper discussed ZnO deep level centers and the origin of the broad band(s) related to defect emission based on recently published results
Summary
Zinc oxide (ZnO), a II-VI direct wide bandgap semiconductor, has been studied by the scientific community since the 1930s [1]. At high levels of doping with such elements, interstitial Li (or Ag) atoms will act as donors and compensate many acceptors [7,8,9] Another possibility for doping ZnO to p-type is to use elements from group V on the O site, including N, P, Sb, and As. most efforts to use these elements have led to poorly reproducible results. The difficulty in doping ZnO to p-type polarity has led researchers to seek to create heterojunctions with other p-type semiconductor materials to enable ZnO to be used in optoelectronic devices These efforts began by growing n-type ZnO thin films on p-type substrates. The origin of the different deep-level emission bands usually observed in ZnO is briefly reviewed This discussion is followed by examples of recently fabricated light emitting diodes (LEDs) based on ZnO nanorods and nanotubes, fabricated using different crystalline and amorphous p-type substrates. We will present results from LEDs grown by low temperature chemical growth at temperatures as low as 50 °C on plastic flexible substrates coated with p-type polymers suitable for large area lighting
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
