Abstract
Si nanoclusters embedded in two different dielectric matrices, silicon oxide and silicon nitride, have been formed through annealing of Si-rich silicon oxide (SRSO) and Si-rich silicon nitride (SRSN) thin films. The light emitting properties of these materials have been analyzed through room temperature UV-excited photoluminescence (PL) experiments. Features of the PL spectra from both types are presented and the nature of light emission from Si-nanoclusters is discussed on the basis of the results from these two different host environments.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
